English
简体中文
RES 1.58K OHM 1% 1/2W 1210 SMD
CAP TANT 47UF 10% 6.3V 1411
CAP CER 0.022UF 25V X7R 2220
DIODE GEN PURP 5.8KV 2200A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 5800 V |
| 电流 - 平均整流 (io): | 2200A |
| 电压 - 正向 (vf) (max) @ if: | 1.8 V @ 2500 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 50 mA @ 5800 V |
| 电容@vr, f: | - |
| 安装类型: | Chassis Mount |
| 包/箱: | DO-200AC, K-PUK |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 160°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SB130-TZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 1A DO41 |
|
SM2000-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
VS-30WQ06FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
VS-15EVL06HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
SS26L R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
ACDSW21-GComchip Technology |
DIODE GEN PURP 200V 200MA SOD123 |
|
1N5819-BZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 1A DO41 |
|
VS-SD1500C08LVishay General Semiconductor – Diodes Division |
DIODE GP 800V 1600A DO200AB |
|
UFR3260Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 30A DO4 |
|
MBR2045MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
|
MA3J142A0LPanasonic |
DIODE GEN PURP 80V 100MA SMINI3 |
|
RGP10A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
|
VS-80APF04-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |