RES 47 OHM 1% 1/8W 0402
DIODE GEN PURP 200V 3A DO214AB
DIODE AVALANCHE 600V 1.5A DO220
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 950 mV @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 30 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 200 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | DO-214AB |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MURS360-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
|
AS1PJHM3/85AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A DO220 |
|
STPS10L60DSTMicroelectronics |
DIODE SCHOTTKY 60V 10A TO220AC |
|
S16JGeneSiC Semiconductor |
DIODE GEN PURP 600V 16A DO203AA |
|
SCS112AGCROHM Semiconductor |
DIODE SCHOTTKY 600V 12A TO220AC |
|
JAN1N3614Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A AXIAL |
|
BYR29-600,127Rochester Electronics |
NOW WEEN - BYR29-600 - ULTRAFAST |
|
BAT54B5003Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
CGRB202-GComchip Technology |
DIODE GEN PURP 100V 2A DO214AA |
|
BYW72-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
|
BAT42W RHGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
VS-C4PH3006LHN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO247AD |
|
RGP30M-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |