CABLE PLATE BK
650V 60A SIC SCHOTTKY DIODE G3,
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 30A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 30 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 740 µA @ 650 V |
电容@vr, f: | 1980pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247-3 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EGF1DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
|
1N4052RPowerex, Inc. |
DIODE GEN PURP 600V 275A DO205AB |
|
RURU5050Rochester Electronics |
RECTIFIER DIODE |
|
TRS2E65F,S1QToshiba Electronic Devices and Storage Corporation |
PB-F DIODE TO-220-2L IF=2A VRRM= |
|
EK 09WSanken Electric Co., Ltd. |
DIODE SCHOTTKY 90V 700MA AXIAL |
|
UES2605RRoving Networks / Microchip Technology |
RECTIFIER |
|
SD4000C40RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 4KV 4450A B-44 |
|
UPS190/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 90V POWERMITE |
|
RO 2BV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.2A AXIAL |
|
VS-88HFR40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
|
A451LPowerex, Inc. |
DIODE GEN PURP 2KV 2500A DO200AC |
|
BYG22DHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
|
S25MGeneSiC Semiconductor |
DIODE GEN PURP 1KV 25A DO203AA |