English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 150 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 150 V |
| 电容@vr, f: | 20pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | TS-1 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BAS316/DLT115Rochester Electronics |
BAS316 - RECTIFIER DIODE |
|
|
FCHS30A12KYOCERA Corporation |
DIODE SCHOTTKY 120V 30A TO-220 F |
|
|
1N5304-1Roving Networks / Microchip Technology |
CURRENT REGULATOR DIODE |
|
|
RS1G-HFComchip Technology |
RECTIFIER FAST RECOVERY 400V 1A |
|
|
VS-88HF80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
|
|
R7S00212XXPowerex, Inc. |
DIODE GP 200V 1200A DO200AA R62 |
|
|
S25KRGeneSiC Semiconductor |
DIODE GEN PURP 800V 25A DO220AA |
|
|
1N3880GeneSiC Semiconductor |
DIODE GEN PURP 100V 6A DO4 |
|
|
BAV5005LP-7BZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 300MA 2DFN |
|
|
JANTXV1N6620Roving Networks / Microchip Technology |
DIODE GEN PURP 220V 1.2A AXIAL |
|
|
EGL34FHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
|
|
AM01ZWSSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
|
R6011425XXYAPowerex, Inc. |
DIODE GEN PURP 1.4KV 250A DO205 |
