类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 700mA |
电压 - 正向 (vf) (max) @ if: | 2.5 V @ 800 mA |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 1.5 µs |
电流 - 反向泄漏@ vr: | 10 µA @ 800 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | - |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SL42HE3_B/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 4A DO214AB |
|
FR85D02GeneSiC Semiconductor |
DIODE GEN PURP 200V 85A DO5 |
|
UES2605Roving Networks / Microchip Technology |
RECTIFIER |
|
HSM380GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 80V 3A DO215AB |
|
RURD1520Rochester Electronics |
RECTIFIER DIODE, 15A, 200V |
|
RURG3050CCRochester Electronics |
RECTIFIER DIODE |
|
PS410825Powerex, Inc. |
DIODE GP 800V 2500A POWRBLOK |
|
JAN1N5418USRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A D5B |
|
1N3162Powerex, Inc. |
DIODE STUD MNT 240A 100V DO-9 |
|
1N2137ARGeneSiC Semiconductor |
DIODE GEN PURP REV 500V 60A DO5 |
|
R6220630PSOOPowerex, Inc. |
DIODE GP 600V 300A DO200AA R62 |
|
SD241Roving Networks / Microchip Technology |
RECTIFIER |
|
XBS206S19R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |