类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 900A |
电压 - 正向 (vf) (max) @ if: | 1.6 V @ 1500 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 10 µs |
电流 - 反向泄漏@ vr: | 50 mA @ 400 V |
电容@vr, f: | - |
安装类型: | Chassis Mount |
包/箱: | DO-200AB, B-PUK |
供应商设备包: | DO-200AB, B-PUK |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CMS16(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 3A MFLAT |
|
BAS20W RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 200MA SOT323 |
|
1N3893ARRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
RHRU7570Rochester Electronics |
RECTIFIER DIODE |
|
TUAS8G M3GTSC (Taiwan Semiconductor) |
8A, 400V, STANDARD RECOVERY RECT |
|
R6002025XXYAPowerex, Inc. |
DIODE GEN PURP 2KV 250A DO205 |
|
MBR6020GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 60A DO5 |
|
CMG03(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 600V 2A M-FLAT |
|
FR106T/REIC Semiconductor, Inc. |
DIODE GEN PURP 800V 1A DO41 |
|
SFT14G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A TS-1 |
|
KCH30A20KYOCERA Corporation |
DIODE SCHOTTKY 200V 30A TO-247 |
|
R5020210RSWAPowerex, Inc. |
DIODE GEN PURP 200V 100A DO205AA |
|
HER308GT-GComchip Technology |
DIODE GEN PURP 1KV 3A DO201AA |