类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 1A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.05 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 36 ns |
电流 - 反向泄漏@ vr: | 1 µA @ 100 V |
电容@vr, f: | 18pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | 2-SMD, Flat Lead |
供应商设备包: | Micro SMA |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
XBS053P11R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
![]() |
SD040SC200A.T1SMC Diode Solutions |
PIV 200V IO 1A CHIP SIZE 40MIL S |
![]() |
S1KW16KA-1Semtech |
DIODE GEN PURP 16KV 2A SMD |
![]() |
US2DWF-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 20 |
![]() |
JAN1N5809USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 6A B-MELF |
![]() |
R5031218FSWAPowerex, Inc. |
DIODE GEN PURP 1.2KV 175A DO205 |
![]() |
WNSC101200CWQWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
![]() |
HER601G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A R-6 |
![]() |
1N6677-1Roving Networks / Microchip Technology |
RECTIFIER DIODE |
![]() |
S1MAL M3GTSC (Taiwan Semiconductor) |
1A, 1000V, STANDARD RECOVERY REC |
![]() |
SFT15G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A TS-1 |
![]() |
JANTX1N4938UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO213 |
![]() |
CMC02(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 1A M-FLAT |