类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 6A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.6 V @ 6 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 30 µA @ 650 V |
电容@vr, f: | 22pF @ 650V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 Full Pack |
供应商设备包: | TO-220F-2L |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BYM11-1000HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
HT18G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A TS-1 |
|
HSB226WKTL-ERochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
FSQS30A045KYOCERA Corporation |
DIODE SCHOTTKY 45V 30A TO-220 2P |
|
MBR60100PTE3/TURoving Networks / Microchip Technology |
DIODE SCHOTTKY 60A 100V TO-247AD |
|
S70GRGeneSiC Semiconductor |
DIODE GEN PURP REV 400V 70A DO5 |
|
JANTX1N3645Roving Networks / Microchip Technology |
DIODE GEN PURP 2KV 250MA AXIAL |
|
1N6841U3Roving Networks / Microchip Technology |
SCHOTTKY RECTIFIER |
|
FR20KR05GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 20A DO5 |
|
R6221230PSOOPowerex, Inc. |
DIODE GP 1.2KV 300A DO200AA R62 |
|
RM 10BV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.2A AXIAL |
|
1N3903RRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
FCH10A15KYOCERA Corporation |
DIODE SCHOTTKY 150V 10A TO-220 F |