English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 800 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 400 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 800 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
F1T3GHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A TS-1 |
|
|
CLS03(TE16R,Q)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 60V 10A L-FLAT |
|
|
JANTX1N6642UBRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA UB |
|
|
F1T2G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
|
S1A-13-GZetex Semiconductors (Diodes Inc.) |
DIODE GENERAL PURPOSE SMA |
|
|
1H6G-TPMicro Commercial Components (MCC) |
DIODE HI EFF R-2 |
|
|
RB751S-407HGTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
|
RB031B-40TLROHM Semiconductor |
DIODE SCHOTTKY CPD |
|
|
SIDC05D60C8X7SA2IR (Infineon Technologies) |
DIODE GEN PURP 600V 15A WAFER |
|
|
JAN1N3600Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO7 |
|
|
GI811-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AC |
|
|
IRD3CH31DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
|
MDO1200-18N1Wickmann / Littelfuse |
DIODE GEN PURP 1.8KV Y1-CU |
