English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 25A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 25 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 3 µs |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 300pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | RA |
| 供应商设备包: | RA |
| 工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
B250AE-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 50V 2A SMA |
|
|
SBLF1040HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A ITO220AC |
|
|
SIDC11D60SIC3IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 4A WAFER |
|
|
R6101030XXYZPowerex, Inc. |
DIODE GEN PURP 1KV 300A DO205 |
|
|
HER108S-APMicro Commercial Components (MCC) |
DIODE GPP HE 1A A-405 |
|
|
NGTD15R65F2SWKSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 650V DIE |
|
|
RB055LA-40TFTRROHM Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
|
|
1N3614GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
|
SIDC14D60F6X1SA3IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
|
LSR103-J0 L0TSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A MELF |
|
|
12FR10B BN BK RVishay / Semiconductor - Opto Division |
DIODE GEN PURP 100V 12A DO203AA |
|
|
56DN06ELEMXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 6400A |
|
|
IRD3CH24DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
