English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 56 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 3 W |
| 阻抗（最大）（zzt）: | 86 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 42.6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | DO-214AA (SMBJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HZS7A1LRX-ERochester Electronics |
DIODE ZENER 0.4W |
|
TZX16C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW DO35 |
|
GDZ9V1B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 200MW SOD323 |
|
JANTXV1N5543D-1Roving Networks / Microchip Technology |
DIODE ZENER 25V 500MW DO35 |
|
JANTX1N6340USRoving Networks / Microchip Technology |
DIODE ZENER 47V 500MW MELF |
|
BZX884S-C27YLNexperia |
BZX884S-C27/SOD882BD/XSON2 |
|
JANTX1N4108D-1Roving Networks / Microchip Technology |
DIODE ZENER 14V 500MW DO35 |
|
MMBZ5263B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 225MW SOT23-3 |
|
SML4757AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 1W DO214AC |
|
KDZVTFTR4.3BROHM Semiconductor |
DIODE ZENER 4.3V 1W PMDU |
|
1PMT5952E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 130V 3W DO216AA |
|
MMBZ5259C-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 225MW SOT23-3 |
|
BZX84C5V1LT116ROHM Semiconductor |
DIODE ZENER 5.1V 250MW SSD3 |
