English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 3.9 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | - |
| 电流 - 反向泄漏@ vr: | 5 µA @ 2 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123 |
| 供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMBZ5249B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 19V 225MW SOT23-3 |
|
MM3Z2V4ST1GRochester Electronics |
DIODE ZENER 2.4V 300MW SOD323 |
|
BZX84B10-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 300MW SOT23-3 |
|
JANTX1N4477Roving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W DO41 |
|
NZX30A,133Nexperia |
DIODE ZENER 30V 500MW ALF2 |
|
1N756A TR PBFREECentral Semiconductor |
DIODE ZENER 8.2V 500MW DO35 |
|
BZT52C4V7-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 410MW SOD123 |
|
JANTX1N4107DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 13V 500MW DO213AA |
|
BZT52B9V1S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 9.1V 200MW SOD323F |
|
1PMT5953B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 150V 3W DO216AA |
|
1PGSMA4749HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 1.25W DO214AC |
|
BZG04-9V1-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 1.25W DO214AC |
|
MM5Z6V8ST1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.8V 500MW SOD523 |
