CAP CER 100PF 50V C0G/NP0 1812
RELAY GEN PURP DPDT 10A 230V AC
DIODE ZENER 200V 1W SUB SMA
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 200 V |
宽容: | ±6% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 750 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 150 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZX84C9V1LT116ROHM Semiconductor |
DIODE ZENER 9.1V 250MW SSD3 |
|
CDLL5951CRoving Networks / Microchip Technology |
DIODE ZENER 120V 1.25W DO213AB |
|
JAN1N4461DUSRoving Networks / Microchip Technology |
DIODE ZENER 6.8V 1.5W D5A |
|
1N3309BRoving Networks / Microchip Technology |
DIODE ZENER 10V 50W DO5 |
|
MMBZ5234ELT1GRochester Electronics |
DIODE ZENER 6.2V 225MW SOT23-3 |
|
1PMT5954BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 160V 3W DO216AA |
|
TZMC6V8-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW SOD80 |
|
1N4746AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 1W DO204AL |
|
BZD27C16P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 800MW DO219AB |
|
BZV55B7V5 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.5V 500MW MINI MELF |
|
PZU4.7B,115Nexperia |
DIODE ZENER 4.7V 310MW SOD323F |
|
JANTXV1N5526C-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO35 |
|
SZ1SMB5914BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.6V 3W SMB |