English
简体中文
DIODE ZENER 100V 800MW DO219AB
IC SRAM 4.5MBIT PARALLEL 100TQFP
IC SRAM 256KBIT PARALLEL 28TSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, BZD27C |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 100 V |
| 宽容: | - |
| 功率 - 最大值: | 800 mW |
| 阻抗（最大）（zzt）: | 200 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 75 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | DO-219AB (SMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TZM5247B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 17V 500MW SOD80 |
|
BZX84C2V7LFHT116ROHM Semiconductor |
DIODE ZENER 2.7V 250MW SSD3 |
|
SZMMSZ4690T3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 5.6V 500MW SOD123 |
|
PDZVTR6.2BROHM Semiconductor |
DIODE ZENER 6.6V 1W PMDTM |
|
BZG03C180-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 1.25W DO214AC |
|
1PMT4126E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 51V 1W DO216 |
|
MMBZ5245BLT3GRochester Electronics |
DIODE ZENER 15V 225MW SOT23-3 |
|
BZG03C12-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 1.25W DO214AC |
|
BZD27B27P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
PZU10B1A,115Nexperia |
DIODE ZENER 10V 320MW SOD323 |
|
BZT52B56-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 410MW SOD123 |
|
SMBJ5363C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 30V 5W SMBJ |
|
SMZG3797BHE3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 1.5W DO215AA |