English
简体中文
CAP CER 2200PF 16V C0G/NP0 1808
DIODE ZENER 180V 1.25W DO214AC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, BZG03C-M |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 180 V |
| 宽容: | ±6.39% |
| 功率 - 最大值: | 1.25 W |
| 阻抗（最大）（zzt）: | 400 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 130 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 500 mA |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1PMT4126E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 51V 1W DO216 |
|
MMBZ5245BLT3GRochester Electronics |
DIODE ZENER 15V 225MW SOT23-3 |
|
BZG03C12-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 1.25W DO214AC |
|
BZD27B27P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
PZU10B1A,115Nexperia |
DIODE ZENER 10V 320MW SOD323 |
|
BZT52B56-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 410MW SOD123 |
|
SMBJ5363C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 30V 5W SMBJ |
|
SMZG3797BHE3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 1.5W DO215AA |
|
1N4753APE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 36V 1W DO204AL |
|
SMBZ5921B-M3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 550MW DO214AA |
|
JAN1N4964CRoving Networks / Microchip Technology |
DIODE ZENER 18V 5W E AXIAL |
|
CZRW55C27-GComchip Technology |
DIODE ZENER 27V 500MW SOD123 |
|
CDLL5271ARoving Networks / Microchip Technology |
DIODE ZENER 100V 10MW DO213AB |