English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 39 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 60 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 29.7 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CMZ5923B BK PBFREECentral Semiconductor |
DIODE ZENER 8.2V 500MW SMA |
|
SMAJ4731E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 2W DO214AC |
|
1N5243B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 500MW DO35 |
|
JAN1N5526D-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO35 |
|
SMBZ5932B-E3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 3W DO214AA |
|
MTZJ2V7SA R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 2.65V 500MW DO34 |
|
EDZVFHT2R3.9BROHM Semiconductor |
DIODE ZENER 3.9V 150MW EMD2 |
|
MMBZ5236C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 225MW SOT23-3 |
|
CDLL5249BRoving Networks / Microchip Technology |
DIODE ZENER 19V 10MW DO213AB |
|
HZS11B2TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
JANTX1N3821D-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 1W DO41 |
|
1N5994CRoving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO35 |
|
TZMC4V3-M-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD80 |
