类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/356 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 91 V |
宽容: | ±5% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 90 Ohms |
电流 - 反向泄漏@ vr: | 2 µA @ 69.2 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 1 A |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | E-MELF |
供应商设备包: | D-5B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZT52-B51JNexperia |
DIODE ZENER 51V 590MW SOD123 |
|
MTZJ27SD R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 26.97V 500MW DO34 |
|
DDZ20ASF-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 18.51V 500MW SOD323F |
|
1PGSMA4751HM2GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 1.25W DO214AC |
|
JANTX1N3045BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
BZG04-10-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 1.25W DO214AC |
|
PDZ16BGWJNexperia |
DIODE ZENER 16V 365MW SOD123 |
|
BZD17C110P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 800MW DO219AB |
|
SMBJ5924C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 2W SMBJ |
|
BZD27C200PWTSC (Taiwan Semiconductor) |
DIODE ZENER 200V 1W SOD123W |
|
SMBJ5947AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 82V 2W SMBJ |
|
BZX384C6V2-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 200MW SOD323 |
|
BZT52B10-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 410MW SOD123 |