类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±5% |
功率 - 最大值: | 1.3 W |
阻抗(最大)(zzt): | 3 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 4.5 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4116D-1Roving Networks / Microchip Technology |
DIODE ZENER 24V DO35 |
|
MMBZ4717-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 350MW SOT23-3 |
|
ACZRW5250B-GComchip Technology |
DIODE ZENER 20V 350MW SOD123FL |
|
1PMT4120CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO216 |
|
1N4919Roving Networks / Microchip Technology |
DIODE ZENER 19.2V 500MW DO35 |
|
PZU15BL,315Rochester Electronics |
DIODE ZENER 15V 250MW DFN1006-2 |
|
GDZ36B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 200MW SOD323 |
|
BZX584C15-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD523 |
|
BZT52B3V0-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3V 410MW SOD123 |
|
1N5922P/TR12Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1.5W DO204AL |
|
MMSZ5224BT1Rochester Electronics |
DIODE ZENER 2.8V 500MW SOD123 |
|
BZX884-C15,315Nexperia |
DIODE ZENER 15V 250MW DFN1006-2 |
|
1N4736A,133Nexperia |
DIODE ZENER 6.8V 1W DO41 |