类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 18 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 21 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 14 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZPY13-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 1.3W DO41 |
|
MMSZ5239BT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 9.1V 500MW SOD123 |
|
1N4744CP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 15V 1W DO204AL |
|
BZV85-C6V2,113Nexperia |
DIODE ZENER 6.2V 1W DO41 |
|
1PGSMC5369HR7GTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 5W DO214AB |
|
JANTX1N759C-1Roving Networks / Microchip Technology |
DIODE ZENER 12V 500MW DO35 |
|
BZX84C6V2-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 300MW SOT23-3 |
|
MMSZ5249C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 19V 500MW SOD123 |
|
BZX79-C22,143Nexperia |
DIODE ZENER 22V 400MW ALF2 |
|
JANTXV1N3039DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 62V 1W DO213AB |
|
MTZJ4V7SB R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 4.68V 500MW DO34 |
|
1N968BRochester Electronics |
DIODE ZENER 20V 500MW DO35 |
|
MMSZ5226CT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.3V 500MW SOD123 |