English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH3™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 525 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.6Ohm @ 1.25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 334 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQ2303ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
|
DMP2033UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A TSOT-26 |
|
SIA433EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
SI2307CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 3.5A SOT23-3 |
|
TP5322N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 220V 260MA TO243AA |
|
DMP3056L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4.3A SOT23 |
|
IRFI4227PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 26A TO220AB FP |
|
CEDM8001VL TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 100MA SOT883VL |
|
IPI65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO262-3 |
|
NTD15N06L-1GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRFP4568IR (Infineon Technologies) |
MOSFET N-CH 150V 171A TO247AC |
|
IPP60R1K4C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO220-3 |
|
NTD4909NA-35GRochester Electronics |
MOSFET N-CH 30V 8.8A/41A I-PAK |
