类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±5% |
功率 - 最大值: | 50 W |
阻抗(最大)(zzt): | 0.3 Ohms |
电流 - 反向泄漏@ vr: | 125 µA @ 5 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 10 A |
工作温度: | -65°C ~ 175°C |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PZU6.2B,115Nexperia |
DIODE ZENER 6.2V 310MW SOD323F |
|
MMBZ4689-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 350MW SOT23-3 |
|
1N5225BSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3V 500MW DO35 |
|
CMHZ5251B TR PBFREECentral Semiconductor |
DIODE ZENER 22V 500MW SOD123 |
|
BZX384B33-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 200MW SOD323 |
|
1N4750E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 27V 1W DO204AL |
|
MMBZ4695-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.7V 350MW SOT23-3 |
|
MMBZ5239C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 225MW SOT23-3 |
|
EDZTE613.6BROHM Semiconductor |
DIODE ZENER 3.6V 150MW EMD2 |
|
Z4KE160A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE ZENER 160V 1.5W DO204AL |
|
HZS6A1TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
JAN1N4125D-1Roving Networks / Microchip Technology |
DIODE ZENER 47V DO35 |
|
BZT52C6V2-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 410MW SOD123 |