类型 | 描述 |
---|---|
系列: | POWERMITE® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 11 V |
宽容: | ±2% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 8.44 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-216AA |
供应商设备包: | DO-216 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV1N3020D-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 1W DO41 |
|
JANTX1N3024D-1Roving Networks / Microchip Technology |
DIODE ZENER 15V 1W DO41 |
|
TZMC4V3-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD80 |
|
BZX384C15-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD323 |
|
1N4735A BK PBFREECentral Semiconductor |
DIODE ZENER 6.2V 1W DO41 |
|
1SMB5935 R5GTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 3W DO214AA |
|
1PMT4124C/TR7Roving Networks / Microchip Technology |
DIODE ZENER 43V 1W DO216 |
|
GDZ5V1B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 200MW SOD323 |
|
NTE5232AKNTE Electronics, Inc. |
DIODE ZENER 200V 10W DO4 |
|
1N5266BNTE Electronics, Inc. |
DIODE ZENER 68V 500MW |
|
BZX384C68-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 200MW SOD323 |
|
1PGSMA4764HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 100V 1.25W DO214AC |
|
SMAJ4759AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 62V 2W DO214AC |