类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, BZG04-M |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 130 V |
宽容: | - |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | - |
电流 - 反向泄漏@ vr: | 5 µA @ 110 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 500 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV1N3039C-1Roving Networks / Microchip Technology |
DIODE ZENER 62V 1W DO41 |
|
JAN1N4126D-1Roving Networks / Microchip Technology |
DIODE ZENER 51V DO35 |
|
1N5930CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 16V 1.5W DO204AL |
|
BZX84C6V2CC-HFComchip Technology |
DIODE ZENER 6.2V 350MW SOT23 |
|
BZG03C130-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 130V 1.25W DO214AC |
|
JAN1N5542C-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO35 |
|
1N965B TR PBFREECentral Semiconductor |
DIODE ZENER 15V 500MW DO35 |
|
BZX384C5V1-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 200MW SOD323 |
|
1N5264C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 60V 500MW DO35 |
|
1N5729DRoving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO35 |
|
TLZ11C-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW SOD80 |
|
DZ2710000LPanasonic |
DIODE ZENER 10V 120MW SSSMINI2 |
|
MMBZ4683-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3V 350MW SOT23-3 |