类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.2 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 10 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 2 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 10 mA |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-213AC, MINI-MELF, SOD-80 |
供应商设备包: | Mini MELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N3045BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
BZG05B68-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 1.25W DO214AC |
|
CLL5242B BK PBFREECentral Semiconductor |
DIODE ZENER 12V 500MW SOD80 |
|
DDZ30BSF-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 28.42V 500MW SOD323F |
|
JAN1N4966DUSRoving Networks / Microchip Technology |
DIODE ZENER 22V 5W D5B |
|
1PMT5929CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 15V 3W DO216AA |
|
1N3333BRoving Networks / Microchip Technology |
DIODE ZENER 52V 50W DO5 |
|
BZD17C43P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 800MW DO219AB |
|
BZD27B36P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 800MW DO219AB |
|
SZMM5Z30VT5GFNexperia |
SZMM5Z30VT5G/SOD523/SC-79 |
|
CMPZ5241B TR PBFREECentral Semiconductor |
DIODE ZENER 11V 350MW SOT23 |
|
1N5924BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 1.25W DO213AB |
|
BZG04-13-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.25W DO214AC |