类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/356 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 27 V |
宽容: | ±1% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 6 Ohms |
电流 - 反向泄漏@ vr: | 2 µA @ 20.6 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 1 A |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | E-MELF |
供应商设备包: | D-5B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4120D-1Roving Networks / Microchip Technology |
DIODE ZENER 30V DO35 |
|
JAN1N4986Roving Networks / Microchip Technology |
DIODE ZENER 150V 5W AXIAL |
|
1N4472USSemtech |
DIODE ZENER 20V 1.5W |
|
BZX85C5V1Rochester Electronics |
DIODE ZENER 5.1V 1W 5% UNIDIR |
|
PLZ10C-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 500MW DO219AC |
|
2M36Z B0GTSC (Taiwan Semiconductor) |
DIODE ZENER 36V 2W DO204AC |
|
JAN1N4106-1Roving Networks / Microchip Technology |
DIODE ZENER 12V 500MW DO35 |
|
1N5242BTRSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 500MW DO35 |
|
1N3519ARoving Networks / Microchip Technology |
DIODE ZENER 11V 500MW DO35 |
|
NTE5251ANTE Electronics, Inc. |
DIODE ZENER 9.1V 50W DO5 |
|
BZD17C180P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 800MW DO219AB |
|
1SMA5946HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 75V 1.5W DO214AC |
|
UDZS24B RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 200MW SOD323F |