类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
电压 - 齐纳 (nom) (vz): | 9.8 V |
宽容: | ±6% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | - |
电流 - 反向泄漏@ vr: | 20 µA @ 6 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | SOD-123F |
供应商设备包: | PMDU |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZMD39BDiotec Semiconductor |
DIODE ZENER 39V 1W DO213AA |
|
CDLL4742ARoving Networks / Microchip Technology |
DIODE ZENER 12V DO213AB |
|
JAN1N749C-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO35 |
|
CZRQR30VB-HFComchip Technology |
DIODE ZENER 30V 125MW 0402 |
|
BZX85C30 R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 1.3W DO204AL |
|
1N4917Roving Networks / Microchip Technology |
DIODE ZENER 19.2V 500MW DO35 |
|
BZD27B180P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 800MW DO219AB |
|
JAN1N3017D-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO41 |
|
MMBZ4700-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 350MW SOT23-3 |
|
PTV8.2B-M3/85AVishay General Semiconductor – Diodes Division |
DIODE ZENER 8.8V 600MW DO220AA |
|
1N5233B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 6V 500MW DO35 |
|
PLZ24C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW DO219AC |
|
BZT52C7V5-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 410MW SOD123 |