类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 16 V |
宽容: | ±5% |
功率 - 最大值: | 300 mW |
阻抗(最大)(zzt): | 40 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 11.2 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
供应商设备包: | SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZD27C30PWTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 1W SOD123W |
|
JANTX1N3043D-1Roving Networks / Microchip Technology |
DIODE ZENER 91V 1W DO41 |
|
GDZ13B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 200MW SOD323 |
|
1PMT5942CE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 51V 3W DO216AA |
|
1PMT4125/TR13Roving Networks / Microchip Technology |
DIODE ZENER 47V 1W DO216 |
|
BZT52B22S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 22V 200MW SOD323F |
|
1PMT4131E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 75V 1W DO216 |
|
BZD27B200P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 200V 800MW DO219AB |
|
TZX9V1D-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 500MW DO35 |
|
1N4745AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 1W DO204AL |
|
NTE5119ANTE Electronics, Inc. |
DIODE ZENER 6.2V 5W DO35 |
|
1N4746AP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO204AL |
|
CZRZ6V8B-HFComchip Technology |
DIODE ZENER 6.8V 100MW 0201 |