English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 3.9 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 9 Ohms |
| 电流 - 反向泄漏@ vr: | 50 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZG03C110-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 1.25W DO214AC |
|
SML4739AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1W DO214AC |
|
1PGSMA160ZHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 160V 1.25W DO214AC |
|
CZRF52C2V7Comchip Technology |
DIODE ZENER 2.7V 200MW 1005 |
|
BZD27C47P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 800MW DO219AB |
|
MMSZ5228B RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3.9V 500MW SOD123F |
|
JAN1N4467DUSRoving Networks / Microchip Technology |
DIODE ZENER 12V 1.5W D5A |
|
1N825AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
1PMT5931B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 18V 3W DO216AA |
|
MMBZ5257BLT3GRochester Electronics |
DIODE ZENER 33V 225MW SOT23-3 |
|
BZD27C11P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 800MW DO219AB |
|
1N5743CRoving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO35 |
|
1N4747CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 20V 1W DO204AL |
