类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 27 V |
宽容: | ±5% |
功率 - 最大值: | 3.2 W |
阻抗(最大)(zzt): | 23 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 20.6 V |
电压 - 正向 (vf) (max) @ if: | 1.25 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-216AA |
供应商设备包: | Powermite |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV1N5536C-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 500MW DO35 |
|
BZT52C5V1-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 410MW SOD123 |
|
PLZ30B-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW DO219AC |
|
PLZ22C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW DO219AC |
|
1N5231BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO213AA |
|
BZG04-24-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1.25W DO214AC |
|
1N5946BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 75V 1.25W DO213AB |
|
BZG05C9V1-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1.25W DO214AC |
|
BZT55C5V6-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD80 |
|
1N4752CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 33V 1W DO204AL |
|
CZRA5940B-GComchip Technology |
DIODE ZENER 43V 1.5W DO214AC |
|
BZD27C6V8P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 800MW DO219AB |
|
JAN1N3041B-1Roving Networks / Microchip Technology |
DIODE ZENER 75V 1W DO41 |