类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 87 V |
宽容: | ±5% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 75 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 66 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | DO-214AA (SMB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZX84B27-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 300MW SOT23-3 |
|
BZT52-B12XNexperia |
DIODE ZENER 12V 590MW SOD123 |
|
BZX585-C43,115Rochester Electronics |
DIODE ZENER 43V 300MW SOD523 |
|
1N5256B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW DO35 |
|
JANTXV1N3040BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 68V 1W DO213AB |
|
JAN1N4102-1Roving Networks / Microchip Technology |
DIODE ZENER 8.7V DO35 |
|
JAN1N4987DRoving Networks / Microchip Technology |
DIODE ZENER 160V 5W E AXIAL |
|
BZT52C5V1-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 410MW SOD123 |
|
TZX7V5B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 500MW DO35 |
|
MMBZ5241C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 225MW SOT23-3 |
|
BZV55B8V2 L0GTSC (Taiwan Semiconductor) |
DIODE ZENER 8.2V 500MW MINI MELF |
|
1N751ARochester Electronics |
DIODE ZENER 5.1V 500MW DO35 |
|
BZX884-B11,315Nexperia |
DIODE ZENER 11V 250MW DFN1006-2 |