English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, BZG05B-M |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 20 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1.25 W |
| 阻抗（最大）（zzt）: | 24 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 15 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD17C24P RQGTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 800MW SUB SMA |
|
BZD27C150PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 147V 1W SUB SMA |
|
BZX79C10Sanyo Semiconductor/ON Semiconductor |
DIODE ZENER 10V 500MW DO35 |
|
BZX55B2V4-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 2.4V 500MW DO35 |
|
DZ2406200LPanasonic |
DIODE ZENER 6.2V 2W TMINIP2 |
|
MMSZ5238C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.7V 500MW SOD123 |
|
JANTXV1N4103UR-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO213AA |
|
EDZVT2R24BROHM Semiconductor |
DIODE ZENER 24V 150MW EMD2 |
|
JANTXV1N3824AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 1W DO213AB |
|
BZT52-B9V1JNexperia |
DIODE ZENER 9.1V 590MW SOD123 |
|
TZX3V9C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW DO35 |
|
BZD27C24P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 800MW DO219AB |
|
BZD27C7V5PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.45V 1W SUB SMA |
