类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/435 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±2% |
功率 - 最大值: | - |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 5.7 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AA (Glass) |
供应商设备包: | DO-213AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SZBZX84C7V5LT3Rochester Electronics |
DIODE ZENER |
|
MM3Z3V9T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.9V 300MW SOD323 |
|
1N4761ANTE Electronics, Inc. |
DIODE ZENER 75V 1W AXIAL |
|
CDZT2R13BROHM Semiconductor |
DIODE ZENER 13V 100MW VMN2 |
|
1N4746G R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 1W DO204AL |
|
1N4750A R1GTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 1W DO204AL |
|
FLZ7V5CRochester Electronics |
DIODE ZENER 7.5V 500MW SOD80 |
|
JANTXV1N3823AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 1W DO213AB |
|
1N5235B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW DO35 |
|
ZM4733A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 1W DO213AB |
|
CZRB3010-GComchip Technology |
DIODE ZENER 10V 3W DO214AA |
|
MMBZ4617-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.4V 350MW SOT23-3 |
|
MMBZ5262C-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 225MW SOT23-3 |