类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) Common Drain |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 6.04A |
rds on (max) @ id, vgs: | 35mOhm @ 4A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15.4nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1610pF @ 10V |
功率 - 最大值: | 890mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDG6302PRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
DMP2110UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
HAT2218R-EL-ERochester Electronics |
POWER, 7.5A, 30V, N-CH MOSFET |
|
DMN5L06DWK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.305A SOT-363 |
|
NTHC5513T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V CHIPFET |
|
DMC31D5UDJ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V SOT963 |
|
PMGD280UN,115Nexperia |
MOSFET 2N-CH 20V 0.87A 6TSSOP |
|
ALD114913PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
APTM120H29FGRoving Networks / Microchip Technology |
MOSFET 4N-CH 1200V 34A SP6 |
|
ALD110802SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
US6K1TRROHM Semiconductor |
MOSFET 2N-CH 30V 1.5A TUMT6 |
|
2N7002KDWA-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET EFFECT,SOT-363 |
|
TC6320TG-GRoving Networks / Microchip Technology |
MOSFET N/P-CH 200V 8SOIC |