类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 4.5A (Tc) |
rds on (max) @ id, vgs: | 64mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 1.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21nC @ 10V |
输入电容 (ciss) (max) @ vds: | 575pF @ 15V |
功率 - 最大值: | 7.8W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | PowerPAK® SC-70-6 Dual |
供应商设备包: | PowerPAK® SC-70-6 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7904BDN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 6A PPAK 1212-8 |
|
TSM4946DCS RLGTSC (Taiwan Semiconductor) |
MOSFET 2 N-CH 60V 4.5A 8SOP |
|
ALD310702SCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
AOTE32136CAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 8TSSOP |
|
DMN53D0LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.36A SOT363 |
|
SH8K22TB1ROHM Semiconductor |
MOSFET 2N-CH 45V 4.5A SOP8 |
|
SP000629364Rochester Electronics |
IPP60R950C6 - 600V N-CHANNEL |
|
MTM684110LBFPanasonic |
MOSFET 2P-CH 12V 4.8A WMINI8-F1 |
|
MSCSM120AM02CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
DMP2200UDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.9A SOT363 |
|
SLA5085Sanken Electric Co., Ltd. |
MOSFET 5N-CH 60V 10A 12-SIP |
|
US6M11TRROHM Semiconductor |
MOSFET N/P-CH 20V/12V TUMT6 |
|
RFD3055SM9AS2479Rochester Electronics |
12A, 60V, 0.15OHM, N-CHANNEL, |