English
简体中文
CAP SILICON 8PF 20% 50V SMD
P-CHANNEL SILICON MOSFET
PROTOTYPING PLATE (ROUND)
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD87334Q3DTexas Instruments |
MOSFET 2N-CH 30V 20A 8SON |
|
AON3611Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 5A/6A 8DFN |
|
NTQD6968NR2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
EPC2102EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
|
SIRB40DP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
FDC8602Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 1.2A 6-SSOT |
|
APTM50HM65FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 51A SP3 |
|
SQJ914EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
|
DMG6968UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 5.2A 8TSSOP |
|
FDMA1023PZ-F106Sanyo Semiconductor/ON Semiconductor |
DUAL P-CH ERTRENCH FETS |
|
IPG20N06S4L11ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
SSM6N7002BFE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 60V 0.2A ES6 |
|
ULN2003V12S16-13Zetex Semiconductors (Diodes Inc.) |
IC PWR RELAY N-CHAN 1:1 16SO |