English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta) |
| rds on (max) @ id, vgs: | 72mOhm @ 3.7A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 655pF @ 10V |
| 功率 - 最大值: | 700mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-VDFN Exposed Pad |
| 供应商设备包: | 6-MicroFET (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPG20N06S4L11ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
SSM6N7002BFE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 60V 0.2A ES6 |
|
ULN2003V12S16-13Zetex Semiconductors (Diodes Inc.) |
IC PWR RELAY N-CHAN 1:1 16SO |
|
ALD114804ASCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
AO4611Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 60V 8SOIC |
|
IRLHS6376TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 3.6A 6PQFN |
|
ALD1102BSALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
|
MSCSM120HM31CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
NVMFD5C462NT1GSanyo Semiconductor/ON Semiconductor |
40V 5.4 MOHM T8 S08FL DUA |
|
RM6602Rectron USA |
MOSFET N&P-CH 30V 3.5/2.7A SOT23 |
|
BUK7K17-80EXNexperia |
MOSFET 2 N-CH 80V 21A LFPAK56D |
|
PMZB290UNE2315Rochester Electronics |
1A, 20V, N CHANNEL, MOSFET, XQF |
|
IRF9358TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 30V 9.2A 8SOIC |
