类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 9.2A |
rds on (max) @ id, vgs: | 16.3mOhm @ 9.2A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 25µA |
栅极电荷 (qg) (max) @ vgs: | 38nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1740pF @ 25V |
功率 - 最大值: | 2W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQUN702E-T1_GE3Vishay / Siliconix |
MOSFET N&P-CH COMMON DRAIN |
|
DMC3730UFL3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CHA 30V 1.1A DFN1310 |
|
FDPC8014ASRochester Electronics |
25V ASYMMETRIC DUAL N-CHANNEL PO |
|
DMG9926UDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 4.2A SOT-26 |
|
DMP210DUDJ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.2A SOT-963 |
|
ALD110904PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
SI7212DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 4.9A 1212-8 |
|
DMN2010UDZ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 11A U-DFN2535-6 |
|
STS10DN3LH5STMicroelectronics |
MOSFET 2N-CH 30V 10A 8-SOIC |
|
SIZ254DT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 70 V (D-S) MOSFET |
|
IRFR9110TFRochester Electronics |
100V P-CHANNEL MOSFET |
|
SI7962DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 40V 7.1A PPAK SO-8 |
|
BSZ0910NDXTMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |