







 
                            MEMS OSC XO 10.0000MHZ CMOS SMD
 
                            MOSFET 2N-CH 10.6V 0.08A 8DIP
 
                            EVAL KIT FOR MAX15062
 
                            IC SHIFT REGISTER 8BIT 14-TSSOP
| 类型 | 描述 | 
|---|---|
| 系列: | EPAD®, Zero Threshold™ | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | 2 N-Channel (Dual) Matched Pair | 
| 场效应管特征: | Logic Level Gate | 
| 漏源电压 (vdss): | 10.6V | 
| 电流 - 连续漏极 (id) @ 25°c: | 80mA | 
| rds on (max) @ id, vgs: | - | 
| vgs(th) (最大值) @ id: | 20mV @ 10µA | 
| 栅极电荷 (qg) (max) @ vgs: | - | 
| 输入电容 (ciss) (max) @ vds: | - | 
| 功率 - 最大值: | 500mW | 
| 工作温度: | 0°C ~ 70°C (TJ) | 
| 安装类型: | Through Hole | 
| 包/箱: | 8-DIP (0.300", 7.62mm) | 
| 供应商设备包: | 8-PDIP | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | SP8K1FRATBROHM Semiconductor | 30V NCH+NCH POWER MOSFET - SP8K1 | 
|   | SIA907EDJT-T1-GE3Vishay / Siliconix | MOSFET 2P-CH 20V 4.5A SC-70-6L | 
|   | IRF7907TRPBFIR (Infineon Technologies) | MOSFET 2N-CH 30V 9.1A/11A 8SO | 
|   | SSM6P39TU,LFToshiba Electronic Devices and Storage Corporation | SMALL SIGNAL MOSFET P-CHX2 VDSS- | 
|   | FDG6332C-F085Sanyo Semiconductor/ON Semiconductor | MOSFET N/P-CH 20V SC70-6 | 
|   | MTM78E2B0LBFPanasonic | MOSFET 2N-CH 20V 4A WSMINI8-F1-B | 
|   | IRF7301TRPBFIR (Infineon Technologies) | MOSFET 2N-CH 20V 5.2A 8-SOIC | 
|   | SIB900EDK-T1-GE3Vishay / Siliconix | MOSFET 2N-CH 20V 1.5A SC-75-6 | 
|   | SSM6L09FUTE85LFToshiba Electronic Devices and Storage Corporation | MOSFET N/P-CH 30V 0.4A/0.2A US6 | 
|   | DMP2100UFU-7Zetex Semiconductors (Diodes Inc.) | MOSFET 2P-CH 20V U-DFN2030-6 | 
|   | EPC2104EPC | GAN TRANS SYMMETRICAL HALF BRIDG | 
|   | NTJD4152PT1GSanyo Semiconductor/ON Semiconductor | MOSFET 2P-CH 20V 0.88A SOT-363 | 
|   | FDS4501HSanyo Semiconductor/ON Semiconductor | MOSFET N/P-CH 30V/20V 8SOIC |