







 
                            OSC MEMS XO DUAL OUTPUT
 
                            MOSFET 2P-CH 30V 4.9A 8SO
 
                            PRESSURE SWITCHES-TRANS PRESSURE
 
                            AMPLIFIER
| 类型 | 描述 | 
|---|---|
| 系列: | HEXFET® | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | 2 P-Channel (Dual) | 
| 场效应管特征: | Logic Level Gate | 
| 漏源电压 (vdss): | 30V | 
| 电流 - 连续漏极 (id) @ 25°c: | 4.9A | 
| rds on (max) @ id, vgs: | 58mOhm @ 4.9A, 10V | 
| vgs(th) (最大值) @ id: | 1V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 34nC @ 10V | 
| 输入电容 (ciss) (max) @ vds: | 710pF @ 25V | 
| 功率 - 最大值: | 2W | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) | 
| 供应商设备包: | 8-SO | 
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