English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Asymmetrical |
| 场效应管特征: | Logic Level Gate, 4.5V Drive |
| 漏源电压 (vdss): | 25V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A, 33A |
| rds on (max) @ id, vgs: | 3mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.4nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1100pF @ 12V |
| 功率 - 最大值: | 2.5W |
| 工作温度: | -55°C ~ 155°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerTDFN |
| 供应商设备包: | PG-TISON-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM300NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
NTQD6866R2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFD8P05SM9AS2463Rochester Electronics |
8A, 50V, 0.300 OHM, P-CHANNEL |
|
SI4599DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 6.8A 8SOIC |
|
MSCSM120HM50CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
UPA2550T1H-T2-ATRochester Electronics |
POWER, 5A, 12V, P-CHANNEL MOSFET |
|
SI1026X-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 0.305A SC89-6 |
|
PMCXB900UEZNexperia |
MOSFET N/P-CH 20V 600/500MA 6DFN |
|
FDMD8580Sanyo Semiconductor/ON Semiconductor |
MOSFET 80V 16A POWER 5X6 |
|
IPG20N06S2L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 2A 8TDSON |
|
ZXMN2088DE6TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 1.7A SOT-26 |
|
EMH2411R-TL-HRochester Electronics |
POWER, N-CHANNEL, MOSFET |
|
DMN3401LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
