English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 18.5A (Ta), 30A (Tc) |
| rds on (max) @ id, vgs: | 6.75mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20.3nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 940pF @ 15V |
| 功率 - 最大值: | 3.7W (Ta), 16.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-Power33 (3x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM8205FRectron USA |
MOSFET 2 N-CH 20V 6A SOT23-6 |
|
DMN2013UFX-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 10A 6-DFN |
|
ALD210808APCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
ALD210802PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
SI7540ADP-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH POWERPAK8 |
|
HIP0063ABRochester Electronics |
HEX LOW SIDE MOSFET DRIVER W/SER |
|
DMN26D0UDJ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 0.24A SOT963 |
|
AON6998Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 19A/26A DFN |
|
CAS120M12BM2Wolfspeed - a Cree company |
MOSFET 2N-CH 1200V 193A MODULE |
|
NVMFD5852NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 15A SO8FL |
|
IRF8910PBFRochester Electronics |
HEXFET POWER MOSFET |
|
APTC60BBM24T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 95A SP3F |
|
IRF3546MTRPBFRochester Electronics |
DUAL PHASE POWIRBLOCK |
