类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) Common Source |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 1.6A |
rds on (max) @ id, vgs: | 68mOhm @ 1A, 4.5V |
vgs(th) (最大值) @ id: | 1.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 2.5nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 410pF @ 10V |
功率 - 最大值: | 750mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-UFBGA, DSBGA |
供应商设备包: | 6-DSBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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