类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 4A |
rds on (max) @ id, vgs: | 65mOhm @ 3.1A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 7nC @ 10V |
输入电容 (ciss) (max) @ vds: | 220pF @ 15V |
功率 - 最大值: | 3.12W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SMD, Flat Lead |
供应商设备包: | 1206-8 ChipFET™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN2019UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 5.4A TSSOP-8 |
|
DMNH6021SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 60V 8.2A POWERDI |
|
RJK03P9DPA-00#J5ARochester Electronics |
POWER, N-CHANNEL MOSFET |
|
NTZD3155CT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SOT-563 |
|
CSD87333Q3DTTexas Instruments |
MOSFET 2N-CH 30V 15A 8VSON |
|
SIZ328DT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CHAN 25V POWERPAIR |
|
ECH8660-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 4.5A 8ECH |
|
AONY36352Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8DFN |
|
BUK6209-30CRochester Electronics |
PFET, 50A I(D), 30V, 0.0192OHM, |
|
MCH6630-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
NVMFD5873NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 10A SO8FL |
|
IRFR1109ARochester Electronics |
PFET, 4.7A I(D), 100V, 0.54OHM, |
|
MTD3N25E1Rochester Electronics |
TRANS MOSFET N-CH 250V 3A 3PIN(2 |