English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Silicon Carbide (SiC) |
| 漏源电压 (vdss): | 1200V (1.2kV) |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | 4V @ 13.2mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 800pF @ 10V |
| 功率 - 最大值: | 600W |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | Module |
| 供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMV55ENEA,215Rochester Electronics |
3.1A, 60V, N CHANNEL, SILICON, M |
|
SSM6N15AFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A 2-2J1C |
|
IRF8313PBFRochester Electronics |
HEXFET POWER MOSFET |
|
CSD86356Q5DTexas Instruments |
25V POWERBLOCK N CH MOSFET |
|
AO6602LAlpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 6-TSOP |
|
RF1S15N06Rochester Electronics |
DISCRETE ,LOGIC LEVEL GATE (5V), |
|
NVMFD5C672NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 49A S08FL |
|
NTJD1155LT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH SC-88-6 |
|
ALD110808SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
SSM6P35AFU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
AUIRFU8403-701TRLRochester Electronics |
AUTOMOTIVE HEXFET POWER MOSFET |
|
SI1902DL-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 0.66A SC-70-6 |
|
RM4606S8Rectron USA |
MOSFET N&P-CH 30V 6.5A /7A 8SOP |
