类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Standard |
漏源电压 (vdss): | 25V, 12V |
电流 - 连续漏极 (id) @ 25°c: | 500mA, 3.9A |
rds on (max) @ id, vgs: | 4Ohm @ 400mA, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.9nC @ 10V |
输入电容 (ciss) (max) @ vds: | 27.6pF @ 10V |
功率 - 最大值: | 1.3W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
供应商设备包: | TSOT-26 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ALD310708ASCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
EM6K7T2RROHM Semiconductor |
MOSFET 2N-CH 20V 0.2A EMT6 |
|
DMN33D8LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.25A |
|
SLA5059Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 4A 12-SIP |
|
FDY2000PZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
APTM50TAM65FPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 500V 51A SP6-P |
|
QS8J11TCRROHM Semiconductor |
MOSFET 2P-CH 12V 3.5A TSMT8 |
|
ALD110814SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
SI4946BEY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 60V 6.5A 8-SOIC |
|
NVMFD5C674NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 42A S08FL |
|
NTMFD5C680NLT1GSanyo Semiconductor/ON Semiconductor |
T6 60V LL SO8FL DUAL |
|
AUIRF9952QTRRochester Electronics |
AUIRF9952 HEXFET POWER MOSFET |
|
IRF7319TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 8SOIC |