English
简体中文
DIODE GEN PURP 200V 200MA SOT23
HP8M31TB1 IS LOW ON-RESISTANCE A
ROUND SPACER, RETAINING, #4 SCRE
DC DC CONVERTER 5V 300W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.5A (Ta) |
| rds on (max) @ id, vgs: | 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 12.3nC, 38nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 470pF, 2300pF @ 30V |
| 功率 - 最大值: | 3W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerTDFN |
| 供应商设备包: | 8-HSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPG20N04S4L07AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
IRF7303TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 4.9A 8-SOIC |
|
ZXMHC3F381N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 30V 8-SOIC |
|
SI5935CDC-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 4A 1206-8 |
|
TSM6963SDCA RVGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 4.5A 8TSSOP |
|
BSS8402DW-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V/50V SC70-6 |
|
2N7002KS6Rectron USA |
MOSFET 2 N-CH 60V 250MA SOT363 |
|
SQ1912EH-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 20V 800MA SC70-6 |
|
IRFI4019H-117PIR (Infineon Technologies) |
MOSFET 2N-CH 150V 8.7A TO220-5 |
|
RM2004NERectron USA |
MOSFET 2 N-CH 20V 6A SOT23-6 |
|
SIA921EDJ-T4-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6 |
|
DMP3098LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 4.4A 8-SOIC |
|
ALD210800SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |