类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N and 2 P-Channel (H-Bridge) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 3.98A, 3.36A |
rds on (max) @ id, vgs: | 33mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 9nC @ 10V |
输入电容 (ciss) (max) @ vds: | 430pF @ 15V |
功率 - 最大值: | 870mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI5935CDC-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 4A 1206-8 |
|
TSM6963SDCA RVGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 4.5A 8TSSOP |
|
BSS8402DW-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V/50V SC70-6 |
|
2N7002KS6Rectron USA |
MOSFET 2 N-CH 60V 250MA SOT363 |
|
SQ1912EH-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 20V 800MA SC70-6 |
|
IRFI4019H-117PIR (Infineon Technologies) |
MOSFET 2N-CH 150V 8.7A TO220-5 |
|
RM2004NERectron USA |
MOSFET 2 N-CH 20V 6A SOT23-6 |
|
SIA921EDJ-T4-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6 |
|
DMP3098LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 4.4A 8-SOIC |
|
ALD210800SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
DMHC10H170SFJ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 100V DFN5045-12 |
|
DMP6110SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 60V 3.3A 8SO |
|
NTQD6968NRochester Electronics |
N-CHANNEL POWER MOSFET |