类型 | 描述 |
---|---|
系列: | EPAD® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Matched Pair |
场效应管特征: | Depletion Mode |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | 12mA, 3mA |
rds on (max) @ id, vgs: | 540Ohm @ 0V |
vgs(th) (最大值) @ id: | 3.45V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
功率 - 最大值: | 500mW |
工作温度: | 0°C ~ 70°C (TJ) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRFN8459TRIR (Infineon Technologies) |
MOSFET 2N-CH 40V 50A 8PQFN |
|
IPU50R3K0CERochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
ZXMC4559DN8TCZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V 3.6A/2.6A 8SO |
|
AUIRF7103QTRIR (Infineon Technologies) |
MOSFET 2N-CH 50V 3A 8SO |
|
TSM4953DCS RLGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 30V 4.9A 8SOP |
|
DMN2041UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 4.7A 6UDFN |
|
FDS4895CRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTUD3171PZT5GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BSC0993NDATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 17A TISON8 |
|
APTM08TAM04PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 75V 120A SP6-P |
|
FDS9934CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6.5A/5A 8SOIC |
|
NTMFD4C86NT3GRochester Electronics |
NTMFD4C86N - POWERPHASE, DUAL N- |
|
BSZ105N04NSGRochester Electronics |
OPTLMOS POWER-MOSFET |