English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | - |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A |
| rds on (max) @ id, vgs: | 50mOhm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 3.3nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 180pF @ 10V |
| 功率 - 最大值: | 1.5W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SMD, Flat Lead |
| 供应商设备包: | TSMT8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMDPB95XNE,115Rochester Electronics |
SMALL SIGNAL MOSFET |
|
TSM6502CR RLGTSC (Taiwan Semiconductor) |
MOSFET N/P-CH 60V 24A/18A 8PDFN |
|
NVMFD5C650NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 111A S08FL |
|
BUK7K32-100EXNexperia |
MOSFET 2N-CH 100V 29A LFPAK56D |
|
ALD212900SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
MCH6660-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
ALD110908SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
DMP3085LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 3.9A 8SO |
|
FDMD8260LRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
ECH8697R-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 10A SOT28 |
|
FDS8947ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVMFD5C466NT1GSanyo Semiconductor/ON Semiconductor |
40V 8.1 MOHM T8 S08FL DUA |
|
UPA1874BGR-9JG-E1-ARochester Electronics |
POWER, 8A, 30V, N-CHANNEL MOSFET |
