DIE INSERT USED WITH CT-2001 OR
MOSFET 2N-CH 30V 27A 8VSON
类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Common Source |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 27A |
rds on (max) @ id, vgs: | 33mOhm @ 7A , 8V |
vgs(th) (最大值) @ id: | 1.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.2nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1250pF @ 15V |
功率 - 最大值: | 2.5W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerTDFN |
供应商设备包: | 8-VSON (3.3x3.3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NX3008PBKS,115Nexperia |
MOSFET 2P-CH 30V 0.2A 6TSSOP |
|
SP8M3TBROHM Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A 8SOIC |
|
DMTH6016LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL 7.6A 8SO |
|
EM6K6T2RROHM Semiconductor |
MOSFET 2N-CH 20V 0.3A EMT6 |
|
ALD212900ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
SSM6N37FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2 N-CHANNEL 20V 250MA US6 |
|
AON6850Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 100V 5A 8DFN |
|
DMN63D8LDWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.22A SOT363 |
|
MTMC8E280LBFPanasonic |
MOSFET 2N-CH 20V 7A WMINI8 |
|
MPIC2112PRochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
SH8KA1GZETBROHM Semiconductor |
SH8KA1 IS A POWER TRANSISTOR WIT |
|
IPB70N12S3L12ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
DMC6040SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V 5.1A 8SO |